Designed for narrowband jamming and EMC immunity testing, this high-power amplifier operates between 800 MHz and 1000 MHz.
Powered by advanced Gallium Nitride (GaN) solid-state technology, it delivers a minimum saturated output power of 100 W with a gain of 50 dB. This amplifier ensures state-of-the-art power performance with excellent efficiency and linearity, making it ideal for general laboratory measurement applications. The EMC08G1G50C offers a robust and reliable solution for demanding RF environments.
| Frequenzbereich | 800 - 1000 MHz |
| Sättigungsleistung (Psat) | 100 W (min.) |
| Kraftgewinn | 50 dB (typisch) |
| Verstärkungswelligkeit | ± 1.0 dB (max.) |
| Harmonische (@ 50W) | -25 dBc (typisch) |
| Falsche Signale | -55 dBc (typisch) |
| Eingangsrückflussdämpfung | -10 dB (max.) |
| Stromversorgung | 100–240 V bei 50/60 Hz |
| Anschlüsse | N-Typ-Präzisionsbuchse |
| Kühlung | Zwangsluft |
| Abmessungen (LxBxH) | 485 x 482 x 180 mm |
| Gewicht | 20 kg |
| Betriebstemp | -40 bis +60 °C |