Designed for narrowband jamming and EMC immunity testing, this high-power amplifier operates between 800 MHz and 1000 MHz.
Powered by advanced Gallium Nitride (GaN) solid-state technology, it delivers a minimum saturated output power of 100 W with a gain of 50 dB. This amplifier ensures state-of-the-art power performance with excellent efficiency and linearity, making it ideal for general laboratory measurement applications. The EMC08G1G50C offers a robust and reliable solution for demanding RF environments.
| Faixa de frequência | 800 - 1000 MHz |
| Potência Saturada (Psat) | 100 W (min) |
| Ganho de potência | 50 dB (tipo) |
| Planicidade de ganho | ± 1.0 dB (máx.) |
| Harmônicos (@ 50W) | -25 dBc (tipo) |
| Sinais Espúrios | -55 dBc (tipo) |
| Perda de retorno de entrada | -10 dB (máx.) |
| Fonte de energia | 100-240 V a 50/60 Hz |
| Conectores | Fêmea de precisão tipo N |
| Resfriamento | Ar Forçado |
| Dimensões (CxLxA) | 485x482x180 milímetros |
| Peso | 20 kg |
| Temperatura operacional | -40 a +60 °C |