Designed for narrowband jamming and EMC immunity testing, this high-power amplifier operates between 800 MHz and 1000 MHz.
Powered by advanced Gallium Nitride (GaN) solid-state technology, it delivers a minimum saturated output power of 100 W with a gain of 50 dB. This amplifier ensures state-of-the-art power performance with excellent efficiency and linearity, making it ideal for general laboratory measurement applications. The EMC08G1G50C offers a robust and reliable solution for demanding RF environments.
| 频率范围 | 800 - 1000 MHz |
| 饱和功率(Psat) | 100 瓦(分钟) |
| 功率增益 | 50 分贝(典型值) |
| 增益平坦度 | ± 1.0 分贝(最大) |
| 谐波(@50W) | -25 dBc(典型值) |
| 杂散信号 | -55 dBc(典型值) |
| 输入回波损耗 | -10 分贝(最大) |
| 电源 | 100-240 伏 @ 50/60 赫兹 |
| 连接器 | N型精密母头 |
| 冷却 | 强制通风 |
| 尺寸(长x宽x高) | 485×482×180 毫米 |
| 重量 | 20 千克 |
| 工作温度 | -40 至 +60 ℃ |