Designed for broadband jamming and EMC immunity testing, this high-power amplifier operates between 1.1 GHz and 1.7 GHz.
Powered by advanced Gallium Nitride (GaN) solid-state technology, it delivers a typical saturated output power of 100 W with a gain of 50 dB. This amplifier ensures state-of-the-art power performance with excellent efficiency and linearity, making it ideal for general laboratory measurement applications. The EMC1G11G750C offers a robust and reliable solution for demanding RF environments.
| 频率范围 | 1.1 - 1.7 GHz |
| 饱和功率(Psat) | 100 W(典型值) |
| 功率增益 | 50 分贝(典型值) |
| 增益平坦度 | ±1.5 分贝(最大) |
| 谐波(@80W) | -15 dBc(典型值) |
| 杂散信号 | -60 dBc(典型值) |
| 输入回波损耗 | -10 分贝(最大) |
| 电源 | 100-240 伏 @ 50/60 赫兹 |
| 连接器 | N型精密母头 |
| 冷却 | 强制通风 |
| 尺寸(长x宽x高) | 485×482×180 毫米 |
| 重量 | 20 千克 |
| 工作温度 | -40 to +85 ℃ |