EMC08G1G50C
RF POWER AMPLIFIER
800 MHz - 1000 MHz / 100 Watts
Designed for narrowband jamming and EMC immunity testing, this high-power amplifier operates between 800 MHz and 1000 MHz.
Powered by advanced Gallium Nitride (GaN) solid-state technology, it delivers a minimum saturated output power of 100 W with a gain of 50 dB. This amplifier ensures state-of-the-art power performance with excellent efficiency and linearity, making it ideal for general laboratory measurement applications. The EMC08G1G50C offers a robust and reliable solution for demanding RF environments.
Key Features
- Narrowband frequency coverage 800 MHz - 1000 MHz
- Minimum Saturated Output Power 100 W
- Advanced GaN solid-state technology
- High Gain (50 dB typical)
- Built-in control and protection circuits
- Ideal for EMC/EMI testing and jamming applications
- Rugged construction for reliability
Specifications
| Frequency Range | 800 - 1000 MHz |
| Saturated Power (Psat) | 100 W (min) |
| Power Gain | 50 dB (typ) |
| Gain Flatness | ± 1.0 dB (max) |
| Harmonics (@ 50W) | -25 dBc (typ) |
| Spurious Signals | -55 dBc (typ) |
| Input Return Loss | -10 dB (max) |
| Power Supply | 100-240 V @ 50/60 Hz |
| Connectors | N-Type Precision Female |
| Cooling | Forced Air |
| Dimensions (LxWxH) | 485 x 482 x 180 mm |
| Weight | 20 kg |
| Operating Temp | -40 to +60 °C |
Attachments & Performance Data
