EMC1G11G750C
RF POWER AMPLIFIER
1.1 GHz - 1.7 GHz / 100 Watts
Designed for broadband jamming and EMC immunity testing, this high-power amplifier operates between 1.1 GHz and 1.7 GHz.
Powered by advanced Gallium Nitride (GaN) solid-state technology, it delivers a typical saturated output power of 100 W with a gain of 50 dB. This amplifier ensures state-of-the-art power performance with excellent efficiency and linearity, making it ideal for general laboratory measurement applications. The EMC1G11G750C offers a robust and reliable solution for demanding RF environments.
Key Features
- Broadband frequency coverage 1.1 GHz - 1.7 GHz
- Saturated Output Power 100 W typical
- Advanced GaN solid-state technology
- High Gain (50 dB typical)
- Built-in control and protection circuits
- Ideal for EMC/EMI testing and jamming applications
- Rugged construction for reliability
Specifications
| Frequency Range | 1.1 - 1.7 GHz |
| Saturated Power (Psat) | 100 W (typ) |
| Power Gain | 50 dB (typ) |
| Gain Flatness | ± 1.5 dB (max) |
| Harmonics (@ 80W) | -15 dBc (typ) |
| Spurious Signals | -60 dBc (typ) |
| Input Return Loss | -10 dB (max) |
| Power Supply | 100-240 V @ 50/60 Hz |
| Connectors | N-Type Precision Female |
| Cooling | Forced Air |
| Dimensions (LxWxH) | 485 x 482 x 180 mm |
| Weight | 20 kg |
| Operating Temp | -40 to +85 °C |
Attachments & Performance Data
